Votsi, H., Mirkhaydarov, B., Gillespie, S., Young, Paul R., Shkunov, M., Aaen, P. H. (2018) Modelling of Solution Processed Indium Arsenide Nanowire Microwave Switches. In: IEEE/MTT-S International Microwave Symposium - IMS. Proceedings of the 2018 IEEE/MTT-S International Microwave Symposium. . pp. 232-235. IEEE (doi:10.1109/MWSYM.2018.8439648?) (The full text of this publication is not currently available from this repository. You may be able to access a copy if URLs are provided) (KAR id:69373)
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Official URL: https://doi.org/10.1109/MWSYM.2018.8439648? |
Abstract
This paper presents the modelling of a coplanarwaveguide bottom-gated FET switch using indium-arsenide nanowires. The nanowires have been included on the switch using dielectrophoresis, which is a solution processable technique. This is a necessary first step towards developing a fully printable switch on a flexible substrate, for low cost microwave devices, built using additive manufacturing methods. The measured S-parameters show the switching capabilities of the device with an insertion loss of 9 dB, when the switch is open (gate voltage ? 60 V). The development of a distributed circuit model that matches the measured data is described, alongside the calculated network parameters used to represent the coplanar-waveguide and the nanowires. The model fits the measured results within 8%, making it suitable for inclusion in a CAD based circuit simulator.
Item Type: | Conference or workshop item (Proceeding) |
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DOI/Identification number: | 10.1109/MWSYM.2018.8439648? |
Uncontrolled keywords: | coplanar-waveguide; On-wafer measurements; Nanowires; Microwave switches |
Subjects: | T Technology |
Divisions: | Divisions > Division of Computing, Engineering and Mathematical Sciences > School of Engineering and Digital Arts |
Depositing User: | Paul Young |
Date Deposited: | 04 Oct 2018 14:29 UTC |
Last Modified: | 05 Nov 2024 12:31 UTC |
Resource URI: | https://kar.kent.ac.uk/id/eprint/69373 (The current URI for this page, for reference purposes) |
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