Tuning the Properties of Nanoceria by Applying Force: Stress Induced Ostwald Ripening

The ionic conductivity and activity of a material, such as ceria, is central to its exploitation in applications such as fuel cells or catalysis. Grain Boundaries (GB) influence profoundly the ionic conductivity and activity of a material. Accordingly, the ability to control GB concentrations is pivotal to these applications. Here, we show that Oswald ripening can be induced by applying uniaxial force. In particular, grain-boundaries are purged to facilitate single nanocrystals from polycrystalline precursors. Our simulations thus predict mechanisms for strain-tunable properties.