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Representation of ion implantation projected range profiles by Pearson distribution curves for silicon technology

Bowyer, M.D.J., Ashworth, D.G., Oven, Robert (1992) Representation of ion implantation projected range profiles by Pearson distribution curves for silicon technology. Solid-State Electronics, 35 (8). pp. 1151-1166. ISSN 0038-1101. (doi:10.1016/0038-1101(92)90016-6) (The full text of this publication is not currently available from this repository. You may be able to access a copy if URLs are provided) (KAR id:53084)

The full text of this publication is not currently available from this repository. You may be able to access a copy if URLs are provided. (Contact us about this Publication)
Official URL
http://dx.doi.org/10.1016/0038-1101(92)90016-6

Abstract

In this paper a transport equation (TE) is derived that matches closely (within the limitation of an infinite target) the transport model in the Monte Carlo code TRIM. Initially, the authors derive a TE that incorporates an arbitrary free-flight path length distribution function and a stopping energy. From this TE a coupled set of integral equations (for spatial moments up to order four) incorporating the liquid free-flight path model used in TRIM is derived. Also, for the gas-like model of the free-flight path length distribution, the equivalence is shown between the new TE and the LSS backward linearized Boltzmann equation extended by Brice to include an intermediate energy.

Item Type: Article
DOI/Identification number: 10.1016/0038-1101(92)90016-6
Subjects: T Technology
Divisions: Faculties > Sciences > School of Engineering and Digital Arts
Faculties > Sciences > School of Engineering and Digital Arts > Broadband & Wireless Communications
Depositing User: Tina Thompson
Date Deposited: 10 Dec 2015 16:15 UTC
Last Modified: 25 Jan 2020 04:08 UTC
Resource URI: https://kar.kent.ac.uk/id/eprint/53084 (The current URI for this page, for reference purposes)
Oven, Robert: https://orcid.org/0000-0002-8517-3634
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