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Memristor-based Random Access Memory: The delayed switching effect could revolutionize memory design

Wang, Frank Z., Chua, Leon O., Helian, Na (2015) Memristor-based Random Access Memory: The delayed switching effect could revolutionize memory design. In: Non-Volatile Memory Technology Symposium (NVMTS), 2015 15th. IEEE Xplore. . Institute of Electrical and Electronics Engineers E-ISBN 978-1-5090-2126-0. (doi:10.1109/NVMTS.2015.7457481) (KAR id:51349)

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Abstract

Memristor’s on/off resistance can naturally store binary bits for non-volatile memories. In this work, we found that memristor’s another peculiar feature that the switching takes place with a time delay (we name it “the delayed switching”) can be used to selectively address any desired memory cell in a crossbar array. The analysis shows this is a must-be in a memristor with a piecewise-linear ?-q curve. A “circuit model”-based experiment has verified the delayed switching feature. It is demonstrated that memristors can be packed at least twice as densely as semiconductors, achieving a significant breakthrough in storage density.

Item Type: Conference or workshop item (Paper)
DOI/Identification number: 10.1109/NVMTS.2015.7457481
Uncontrolled keywords: memristor; delayed switching; Random Access Memory (RAM)
Subjects: Q Science > QA Mathematics (inc Computing science)
Divisions: Divisions > Division of Computing, Engineering and Mathematical Sciences > School of Computing
Depositing User: Frank Wang
Date Deposited: 02 Nov 2015 15:46 UTC
Last Modified: 10 Dec 2022 08:28 UTC
Resource URI: https://kar.kent.ac.uk/id/eprint/51349 (The current URI for this page, for reference purposes)

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  • Memristor-based Random Access Memory: The delayed switching effect could revolutionize memory design. (deposited 02 Nov 2015 15:46) [Currently Displayed]

University of Kent Author Information

Wang, Frank Z..

Creator's ORCID: https://orcid.org/0000-0003-4378-2172
CReDIT Contributor Roles:

Chua, Leon O..

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