Wang, Frank Z., Chua, Leon O., Helian, Na (2015) Memristor-based Random Access Memory: The delayed switching effect could revolutionize memory design. In: Non-Volatile Memory Technology Symposium (NVMTS), 2015 15th. IEEE Xplore. . Institute of Electrical and Electronics Engineers E-ISBN 978-1-5090-2126-0. (doi:10.1109/NVMTS.2015.7457481) (KAR id:51349)
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| Official URL: http://dx.doi.org/10.1109/NVMTS.2015.7457481 |
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Abstract
Memristor’s on/off resistance can naturally store binary bits for non-volatile memories. In this work, we found that memristor’s another peculiar feature that the switching takes place with a time delay (we name it “the delayed switching”) can be used to selectively address any desired memory cell in a crossbar array. The analysis shows this is a must-be in a memristor with a piecewise-linear ?-q curve. A “circuit model”-based experiment has verified the delayed switching feature. It is demonstrated that memristors can be packed at least twice as densely as semiconductors, achieving a significant breakthrough in storage density.
| Item Type: | Conference or workshop item (Paper) |
|---|---|
| DOI/Identification number: | 10.1109/NVMTS.2015.7457481 |
| Uncontrolled keywords: | memristor; delayed switching; Random Access Memory (RAM) |
| Subjects: | Q Science > QA Mathematics (inc Computing science) |
| Divisions: | Divisions > Division of Computing, Engineering and Mathematical Sciences > School of Computing |
| Depositing User: | Frank Wang |
| Date Deposited: | 02 Nov 2015 15:46 UTC |
| Last Modified: | 10 Dec 2022 08:28 UTC |
| Resource URI: | https://kar.kent.ac.uk/id/eprint/51349 (The current URI for this page, for reference purposes) |
| Wang, Frank Z.: |  https://orcid.org/0000-0003-4378-2172 |
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