Central moments of ion implantation distributions derived by the backward Boltzmann transport equation compared with Monte Carlo simulations

The authors study solutions to the backward Boltzmann transport equation (BBTE) specialized to equations governing moments of the distribution of ions implanted into amorphous targets. A central moment integral equation set has been derived starting from the classical plane source BBTE for non-central moments. A full generator equation is provided to allow construction of equation sets of an arbitrary size, thus allowing computation of moments of arbitrary order. A BBTE solver program has been written that uses the residual correction technique proposed by Winterbon (1970). A simple means is presented to allow direct incorporation of Biersack's two-parameter 'magic formula' into a BBTE solver program. Results for non-central and central moment integral equation sets are compared with Monte Carlo simulations, using three different formulae for the mean free flight path between collisions. Comparisons are performed for the ions B and As, implanted into the target a-Si, over the energy range 1 keV-1 MeV. The central moment integral equation set is found to have superior convergence properties to the non-central moment equation set. For As ions implanted into a-Si, at energies below approximately 30 keV, significant differences are observed, for third- and fourth-order moments, when using alternative versions for the mean free flight path. Third- and fourth-order moments derived using one- and two-parameter scattering mechanisms also show significant differences over the same energy range.