Yang, Xiao, Chen, Wanlong, Wang, Frank Z. (2013) A Memristor-CAM (Content Addressable Memory) Cell: New Design and Evaluation. In: International Conference on Computer Science and Information Technology. . pp. 1045-1048. (The full text of this publication is not currently available from this repository. You may be able to access a copy if URLs are provided) (KAR id:33630)
The full text of this publication is not currently available from this repository. You may be able to access a copy if URLs are provided. |
Abstract
Content addressable memory (CAM) is one kind of the associative memory; it can be used in several high-speed searching applications. In this paper, we propose a new CAM cell that employs memristors (memory resistor) as the storage element and the main part of the comparator. This presented new CAM cell involves two memristors; one is for saving the data as a storage element and the other one is used as an important part of the comparator instead of the conventional logic gate. Based on the unique characters of the memristor, we explore the new Memristor-CAM cell design to analyze the possibility to build memristor-based storage structures with lower power consumption to achieve the purpose of saving energy and decreasing the searching time.
Item Type: | Conference or workshop item (Paper) |
---|---|
Subjects: | Q Science > QA Mathematics (inc Computing science) > QA 75 Electronic computers. Computer science |
Divisions: | Divisions > Division of Computing, Engineering and Mathematical Sciences > School of Computing |
Depositing User: | X. Yang |
Date Deposited: | 16 Apr 2013 17:54 UTC |
Last Modified: | 05 Nov 2024 10:16 UTC |
Resource URI: | https://kar.kent.ac.uk/id/eprint/33630 (The current URI for this page, for reference purposes) |
- Export to:
- RefWorks
- EPrints3 XML
- BibTeX
- CSV
- Depositors only (login required):