Relationship between structure and deposition conditions for CuInO2 thin films

Yaicle, C. and Blacklocks, Aran N. and Chadwick, Alan V. and Perriere, J. and Rougier, A. (2007) Relationship between structure and deposition conditions for CuInO2 thin films. Applied Surface Science, 254 (4). pp. 1343-1346. ISSN 0169-4332 . (doi: ) (Access to this publication is currently restricted. You may be able to access a copy if URLs are provided)

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CuInO2 thin films were deposited using the Pulsed Laser Deposition technique. The influence of various deposition parameters and mainly the oxygen pressure on the texture, composition and structure of the films is discussed. Films deposited with an oxygen pressure in the 0.2-1 Pa range exhibit the delafossite structure. Higher pressure introduces an increase in the oxygen content leading to a CuInO2.10 composition for the film deposited at 5 Pa and a progressive loss of the delafossite structure. As confirmed by an EXAFS study, the oxygen stoichiometry controls the Cu+/ Cu2+ ratio.

Item Type: Article
Uncontrolled keywords: thin films; copper indium oxide; delafossite; stoichiometry; oxygen pressure; pulsed laser deposition; EXAFS
Subjects: Q Science > QD Chemistry
Q Science > QC Physics
Divisions: Faculties > Sciences > School of Physical Sciences > Functional Materials Group
Depositing User: Suzanne Duffy
Date Deposited: 25 Apr 2008 08:32 UTC
Last Modified: 14 May 2014 11:04 UTC
Resource URI: (The current URI for this page, for reference purposes)
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