Relationship between structure and deposition conditions for CuInO2 thin films

Yaicle, C., Blacklocks, Aran N., Chadwick, Alan V., Perriere, J., Rougier, A. (2007) Relationship between structure and deposition conditions for CuInO2 thin films. Applied Surface Science, 254 (4). pp. 1343-1346. ISSN 0169-4332. (doi:10.1016/j.apsusc.2007.08.016) (Access to this publication is currently restricted. You may be able to access a copy if URLs are provided) (KAR id:2821)

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Abstract

CuInO2 thin films were deposited using the Pulsed Laser Deposition technique. The influence of various deposition parameters and mainly the oxygen pressure on the texture, composition and structure of the films is discussed. Films deposited with an oxygen pressure in the 0.2-1 Pa range exhibit the delafossite structure. Higher pressure introduces an increase in the oxygen content leading to a CuInO2.10 composition for the film deposited at 5 Pa and a progressive loss of the delafossite structure. As confirmed by an EXAFS study, the oxygen stoichiometry controls the Cu+/ Cu2+ ratio.

Item Type:	Article
DOI/Identification number:	10.1016/j.apsusc.2007.08.016
Uncontrolled keywords:	thin films; copper indium oxide; delafossite; stoichiometry; oxygen pressure; pulsed laser deposition; EXAFS
Subjects:	Q Science > QD Chemistry Q Science > QC Physics
Divisions:	Divisions > Division of Natural Sciences > Physics and Astronomy
Funders:	European Commission (https://ror.org/00k4n6c32) Engineering and Physical Sciences Research Council (https://ror.org/0439y7842)
Depositing User:	Suzanne Duffy
Date Deposited:	25 Apr 2008 08:32 UTC
Last Modified:	05 Nov 2024 09:34 UTC
Resource URI:	https://kar.kent.ac.uk/id/eprint/2821 (The current URI for this page, for reference purposes)

University of Kent Author Information

Chadwick, Alan V..

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