Goodchild, M.S., Bennett, R.J. (1993) Noise-free anodization profiles of multilayer structures using an evaporated silicon monoxide mask. International Journal of Electronics, 75 (4). pp. 781-786. ISSN 0020-7217. (doi:10.1080/00207219308907157) (The full text of this publication is not currently available from this repository. You may be able to access a copy if URLs are provided) (KAR id:22110)
| The full text of this publication is not currently available from this repository. You may be able to access a copy if URLs are provided. | |
| Official URL: http://dx.doi.org/10.1080/00207219308907157 |
Abstract
In recent years, the anodization process has been developed into an analytical tool for the assessment of multilayer structures. This is usually achieved by using a constant current supply and monitoring the growth of the oxide layer, through the multilayer, by measuring the increase in the voltage developed across the anodization cell. In this paper, it is described how a silicon monoxide film has been used as the masking material in order to overcome the problem of electrical breakdown of the mask. This enables noise free anodization profiles to be obtained from multilayer structures.
| Item Type: | Article |
|---|---|
| DOI/Identification number: | 10.1080/00207219308907157 |
| Subjects: | T Technology > TK Electrical engineering. Electronics. Nuclear engineering |
| Divisions: | Divisions > Division of Computing, Engineering and Mathematical Sciences > School of Engineering and Digital Arts |
| Depositing User: | M. Nasiriavanaki |
| Date Deposited: | 02 Aug 2009 15:45 UTC |
| Last Modified: | 05 Nov 2024 10:01 UTC |
| Resource URI: | https://kar.kent.ac.uk/id/eprint/22110 (The current URI for this page, for reference purposes) |
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