Investigation of the complex reactions of SiH4 and GeH4 in the ion trap using dynamically programmed scanning

The rate constants of the gas-phase reactions of primary ions in a 1 : 1 SiH4/GeH4 mixture have been determined by ion trap mass spectrometry and compared with those obtained for SiH4 and for GeH4 alone. The main reaction pathways are hydride or hydrogen transfer, formation of ions containing two silicon or two germanium atoms and ions containing silicon and germanium together. Experimental rate constants have been compared with the calculated collision rate constants and efficiencies have been determined. The formation of mixed ions, important in the radiolytical preparation of materials of interest in photovoltaic technology, is more efficient when SiHm+ (m = 0, 1) ions react with GeH4 than when GeH+ reacts with SiH4, and occurs at comparable rates to SiH2+ and GeH2+ reacting with GeH4 and SiH4, respectively.