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Mechanism of drain current droop in GaAs MESFETs

Ladbrooke, P.H., Jastrzebski, Adam K., Donarski, R.J., Bridge, J.P., Barnaby, J.E. (1995) Mechanism of drain current droop in GaAs MESFETs. Electronics Letters, 31 (21). pp. 1875-1876. ISSN 0013-5194. (doi:10.1049/el:19951234) (The full text of this publication is not currently available from this repository. You may be able to access a copy if URLs are provided) (KAR id:19329)

The full text of this publication is not currently available from this repository. You may be able to access a copy if URLs are provided.
Official URL
http://dx.doi.org/10.1049/el:19951234

Abstract

The mechanisms responsible for the drain current droop in GaAs MESFETs are discussed and their relative contributions evaluated. Contrary to a common belief that the cause is mainly self-heating, it is shown on the example of a power MESFET that deep level effects (surface states and bulk traps) have a higher contribution.

Item Type: Article
DOI/Identification number: 10.1049/el:19951234
Uncontrolled keywords: gallium arsenide; mesfets; semiconductor device models
Subjects: T Technology > TK Electrical engineering. Electronics. Nuclear engineering
T Technology > TA Engineering (General). Civil engineering (General)
Divisions: Divisions > Division of Computing, Engineering and Mathematical Sciences > School of Engineering and Digital Arts
Depositing User: O.O. Odanye
Date Deposited: 08 Jun 2009 12:42 UTC
Last Modified: 16 Nov 2021 09:57 UTC
Resource URI: https://kar.kent.ac.uk/id/eprint/19329 (The current URI for this page, for reference purposes)
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