Ladbrooke, P.H., Jastrzebski, Adam K., Donarski, R.J., Bridge, J.P., Barnaby, J.E. (1995) Mechanism of drain current droop in GaAs MESFETs. Electronics Letters, 31 (21). pp. 1875-1876. ISSN 0013-5194. (doi:10.1049/el:19951234) (The full text of this publication is not currently available from this repository. You may be able to access a copy if URLs are provided) (KAR id:19329)
| The full text of this publication is not currently available from this repository. You may be able to access a copy if URLs are provided. | |
| Official URL: http://dx.doi.org/10.1049/el:19951234 |
Abstract
The mechanisms responsible for the drain current droop in GaAs MESFETs are discussed and their relative contributions evaluated. Contrary to a common belief that the cause is mainly self-heating, it is shown on the example of a power MESFET that deep level effects (surface states and bulk traps) have a higher contribution.
| Item Type: | Article |
|---|---|
| DOI/Identification number: | 10.1049/el:19951234 |
| Uncontrolled keywords: | gallium arsenide; mesfets; semiconductor device models |
| Subjects: |
T Technology > TK Electrical engineering. Electronics. Nuclear engineering T Technology > TA Engineering (General). Civil engineering (General) |
| Divisions: | Divisions > Division of Computing, Engineering and Mathematical Sciences > School of Engineering and Digital Arts |
| Depositing User: | O.O. Odanye |
| Date Deposited: | 08 Jun 2009 12:42 UTC |
| Last Modified: | 05 Nov 2024 09:55 UTC |
| Resource URI: | https://kar.kent.ac.uk/id/eprint/19329 (The current URI for this page, for reference purposes) |
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