Bowyer, M.D.J. and Ashworth, D.G. and Oven, Robert (1996) Generating ion implantation profiles in one and two dimensions .2. Depth-dependent moments and line-source responses. Journal of Physics D: Applied Physics, 29 (5). pp. 1286-1299. ISSN 0022-3727. (The full text of this publication is not currently available from this repository. You may be able to access a copy if URLs are provided)
In this, the second of two papers, various techniques and models are proposed for the extraction of depth-dependent lateral moments from the depth-independent mixed moments produced by transport equation solvers. These depth-dependent moments are then compared with those obtained directly from Monte Carlo simulations. A set of such comparisons, using consistent input quantities, is performed over a range of ion-target mass ratios and energies. The depth-dependent moments are then combined with Pearson and/or Johnson curves to form two-dimensional ion implantation profiles. Comparisons are made between these line-source responses (LSRs) and LSRs obtained directly from Monte Carlo simulations into a-Si for the various models over a range of energies and ion types. Selection of appropriate models leads to LSRs for the ions B, P and As implanted into a-Si which are in good agreement with Monte Carte simulations over three orders of magnitude of profile concentration. The techniques described will enable two-dimensional profile information to be stored and regenerated, quickly and efficiently, within process simulators so that rapid optimization of processing parameters may be achieved.
|Subjects:||Q Science > QC Physics|
|Divisions:||Faculties > Science Technology and Medical Studies > School of Engineering and Digital Arts|
|Depositing User:||M.A. Ziai|
|Date Deposited:||16 May 2009 05:42|
|Last Modified:||03 Jun 2014 09:44|
|Resource URI:||https://kar.kent.ac.uk/id/eprint/18839 (The current URI for this page, for reference purposes)|