Honeybone, P.J.R. and Walters, J.K. and Huxley, D.W. and Newport, Robert J. and Howells, W.S. and Tomkinson, John and Hotham, C. (1994) The Effect Of Hydrogen Dilution On The Interatomic Bonding Of Amorphous Hydrogenated Silicon - Carbon. Journal of Non-Crystalline Solids, 169 (1-2). pp. 54-63. ISSN 0022-3093. (The full text of this publication is not currently available from this repository. You may be able to access a copy if URLs are provided)
The effect of hydrogen dilution of the precursor gas mixture on the local bonding environment in glow-discharge deposited a-Si:C:H has been studied by neutron diffraction and inelastic neutron scattering. The neutron diffraction results show a large increase in the silicon-carbon bonding upon hydrogen dilution, at the expense of silicon-silicon bonding. The inelastic neutron scattering provides complementary information on the hydrogen bonding environment. The hydrogen is predominantly bonded in SiH and SiH2 groups, with a large increase in the SiH2 group concentration occurring upon hydrogen dilution. The data presented here show that SiH3 and CH(n) groups are present as a very small fraction of H bonding sites, if at all.
|Divisions:||Faculties > Science Technology and Medical Studies > School of Physical Sciences > Functional Materials Group|
|Depositing User:||J.M. Smith|
|Date Deposited:||14 May 2009 12:34|
|Last Modified:||18 Jul 2014 10:27|
|Resource URI:||https://kar.kent.ac.uk/id/eprint/15910 (The current URI for this page, for reference purposes)|