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The Effect Of Hydrogen Dilution On The Interatomic Bonding Of Amorphous Hydrogenated Silicon - Carbon

Honeybone, P.J.R., Walters, J.K., Huxley, D.W., Newport, Robert J., Howells, W.S., Tomkinson, John, Hotham, C. (1994) The Effect Of Hydrogen Dilution On The Interatomic Bonding Of Amorphous Hydrogenated Silicon - Carbon. Journal of Non-Crystalline Solids, 169 (1-2). pp. 54-63. ISSN 0022-3093. (doi:10.1016/0022-3093(94)90224-0) (The full text of this publication is not currently available from this repository. You may be able to access a copy if URLs are provided) (KAR id:15910)

The full text of this publication is not currently available from this repository. You may be able to access a copy if URLs are provided. (Contact us about this Publication)
Official URL
http://dx.doi.org/10.1016/0022-3093(94)90224-0

Abstract

The effect of hydrogen dilution of the precursor gas mixture on the local bonding environment in glow-discharge deposited a-Si:C:H has been studied by neutron diffraction and inelastic neutron scattering. The neutron diffraction results show a large increase in the silicon-carbon bonding upon hydrogen dilution, at the expense of silicon-silicon bonding. The inelastic neutron scattering provides complementary information on the hydrogen bonding environment. The hydrogen is predominantly bonded in SiH and SiH2 groups, with a large increase in the SiH2 group concentration occurring upon hydrogen dilution. The data presented here show that SiH3 and CH(n) groups are present as a very small fraction of H bonding sites, if at all.

Item Type: Article
DOI/Identification number: 10.1016/0022-3093(94)90224-0
Subjects: Q Science
Divisions: Faculties > Sciences > School of Physical Sciences > Functional Materials Group
Depositing User: J.M. Smith
Date Deposited: 14 May 2009 12:34 UTC
Last Modified: 18 Jun 2019 10:43 UTC
Resource URI: https://kar.kent.ac.uk/id/eprint/15910 (The current URI for this page, for reference purposes)
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