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Light Confinement in 3D Silicon Doped with Germanium (n-SixGe1-x) and Silicon-On-Insulator (SOI) Photonic Crystal Structures

Ouerghi, F., AbdelMalek, Fathi, Haxha, Shyqyri, Mejatty, M., Bouchriha, Habib, Haxha, Vesel (2006) Light Confinement in 3D Silicon Doped with Germanium (n-SixGe1-x) and Silicon-On-Insulator (SOI) Photonic Crystal Structures. Optics Communications, 265 (2). pp. 683-691. ISSN 0030-4018. (doi:10.1016/j.optcom.2006.04.010) (The full text of this publication is not currently available from this repository. You may be able to access a copy if URLs are provided) (KAR id:9773)

The full text of this publication is not currently available from this repository. You may be able to access a copy if URLs are provided.
Official URL
http://dx.doi.org/10.1016/j.optcom.2006.04.010
Item Type: Article
DOI/Identification number: 10.1016/j.optcom.2006.04.010
Subjects: T Technology > TK Electrical engineering. Electronics. Nuclear engineering > TK5101 Telecommunications
Divisions: Divisions > Division of Computing, Engineering and Mathematical Sciences > School of Engineering and Digital Arts
Depositing User: Yiqing Liang
Date Deposited: 08 Sep 2008 21:03 UTC
Last Modified: 16 Nov 2021 09:48 UTC
Resource URI: https://kar.kent.ac.uk/id/eprint/9773 (The current URI for this page, for reference purposes)
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