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Direct Phase-Change Cooling of Vapor Chamber Integrated With IGBT Power Electronic Module for Automotive Application

Chen, Yiyi, Li, Bo, Wang, Xuehui, Wang, Xin, Yan, Yuying, Wang, Yangang, Qi, Fang, Li, Helong, Li, Xiang (2021) Direct Phase-Change Cooling of Vapor Chamber Integrated With IGBT Power Electronic Module for Automotive Application. IEEE Transactions on Power Electronics, 36 (5). pp. 5736-5747. ISSN 0885-8993. E-ISSN 1941-0107. (doi:10.1109/TPEL.2020.3031372) (The full text of this publication is not currently available from this repository. You may be able to access a copy if URLs are provided) (KAR id:87688)

The full text of this publication is not currently available from this repository. You may be able to access a copy if URLs are provided. (Contact us about this Publication)
Official URL
http://dx.doi.org/10.1109/TPEL.2020.3031372

Abstract

In electric vehicles and hybrid electric vehicles, insulated-gate bipolar transistor (IGBT) power module trends to dissipate higher heat flux due to increased power rating and reduced package size. An inefficient cooling method will result in stringent thermal reliability problems. Therefore, there is a strong need for innovative and efficient cooling technologies in order to tackle these issues. In this article, a localized direct phase-change cooling strategy is applied and integrated with direct bonded copper in IGBT power module. Vapor chamber with light weight, high thermal conductivity, and even temperature uniformity replaces original copper baseplate. Layers of thermal grease and original cooling plate are removed, leading to a further reduction in thermal resistance. In order to evaluate the new module, a thermal model and an experiment were built to analyze temperature distribution in layers, junction temperature, temperature uniformity, and thermal resistance. Results indicate the integrated thermal management system outperforms traditional cooling solutions on the cooling capacity. Improvements on junction temperature, temperature uniformity, and total thermal resistance are 34.6%, 76.6%, and 41.6%, respectively. The results illustrate the potential of phase-change cooling by vapor chamber. It provides a new perspective in the compact and efficient design of power electric modules.

Item Type: Article
DOI/Identification number: 10.1109/TPEL.2020.3031372
Uncontrolled keywords: Thermal resistance; Insulated gate bipolar transistors; Copper; Heating systems; Heat sinks; Electric vehicles (EVs); insulated-gate bipolar transistor (IGBT) semiconductor module; phase-change cooling; vapor chamber (VC)
Subjects: T Technology > TJ Mechanical engineering and machinery
T Technology > TJ Mechanical engineering and machinery > Control engineering
Divisions: Divisions > Division of Computing, Engineering and Mathematical Sciences > School of Engineering and Digital Arts
Depositing User: Amy Boaler
Date Deposited: 20 Apr 2021 15:07 UTC
Last Modified: 07 Jun 2021 11:09 UTC
Resource URI: https://kar.kent.ac.uk/id/eprint/87688 (The current URI for this page, for reference purposes)
Li, Bo: https://orcid.org/0000-0002-1973-1570
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