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An XAS study of the defect structure of Ti-doped alpha-Cr2O3

Blacklocks, Aran N., Savin, Shelley L.P., Chadwick, Alan V., Atkinson, Alan (2006) An XAS study of the defect structure of Ti-doped alpha-Cr2O3. Solid State Ionics, 177 (33-34). pp. 2939-2944. ISSN 0167-2738. (doi:10.1016/j.ssi.2006.08.028) (Access to this publication is currently restricted. You may be able to access a copy if URLs are provided)

Abstract

The bulk defect structure in Cr2-xTixO3 (x = 0.05, 0.20 and 0.30) has been studied by X-ray absorption spectroscopy measurements at the Cr and Ti K-edges. The results show that the Ti is predominantly present in the IV oxidation state and resides on the normal Cr host lattice site. The dopant is charge compensated by Cr3+ vacancies and there is evidence for the formation of defect clusters; however, the detailed structure of these clusters could not be deduced.

Item Type: Article
DOI/Identification number: 10.1016/j.ssi.2006.08.028
Uncontrolled keywords: Chromium oxide, XAS, EXAFS, XANES, Point defects, Gas sensor
Subjects: Q Science
Divisions: Faculties > Sciences > School of Physical Sciences
Depositing User: Alan Chadwick
Date Deposited: 23 Sep 2008 14:49 UTC
Last Modified: 10 Jun 2019 11:34 UTC
Resource URI: https://kar.kent.ac.uk/id/eprint/8429 (The current URI for this page, for reference purposes)
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