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Fractional memristor

Wang, Frank Z. (2017) Fractional memristor. Applied Physics Letters, 111 (24). ISSN 0003-6951. (doi:10.1063/1.5000919)

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https://doi.org/10.1063/1.5000919

Abstract

Based on the differential conformal transformation in the fractional order, we defined the fractional memristor in contrast to the traditional (integer-order) memristor. As an example, a typical spintransfer torque (STT) memristor (with the asymmetric resistance hysteresis) was proved to be a 0.8 fractional memristor. In conclusion, many memristors should not be treated as ideal ones due to the fractional interaction between flux and charge. Indeed, unless a non-ideal memristor is properly modelled as a fractional memristor, no deep physical understanding would be possible to develop a reliable commercial product.

Item Type: Article
DOI/Identification number: 10.1063/1.5000919
Uncontrolled keywords: memristor, fractional calculus, differential conformal transformation
Subjects: Q Science > QA Mathematics (inc Computing science)
Divisions: Faculties > Sciences > School of Computing > Data Science
Depositing User: Frank Wang
Date Deposited: 18 Dec 2017 07:45 UTC
Last Modified: 09 Jul 2019 09:12 UTC
Resource URI: https://kar.kent.ac.uk/id/eprint/65488 (The current URI for this page, for reference purposes)
Wang, Frank Z.: https://orcid.org/0000-0003-4378-2172
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