Wang, Frank Z. (2017) Fractional memristor. Applied Physics Letters, 111 (24). Article Number 243502. ISSN 0003-6951. (doi:10.1063/1.5000919) (KAR id:65488)
PDF
Publisher pdf
Language: English |
||
Download (732kB)
Preview
|
|
|
This file may not be suitable for user of assistive technology. Request an accessible format. |
||
Official URL https://doi.org/10.1063/1.5000919 |
Abstract
Based on the differential conformal transformation in the fractional order, we defined the fractional memristor in contrast to the traditional (integer-order) memristor. As an example, a typical spintransfer torque (STT) memristor (with the asymmetric resistance hysteresis) was proved to be a 0.8 fractional memristor. In conclusion, many memristors should not be treated as ideal ones due to the fractional interaction between flux and charge. Indeed, unless a non-ideal memristor is properly modelled as a fractional memristor, no deep physical understanding would be possible to develop a reliable commercial product.
Item Type: | Article |
---|---|
DOI/Identification number: | 10.1063/1.5000919 |
Uncontrolled keywords: | memristor, fractional calculus, differential conformal transformation |
Subjects: | Q Science > QA Mathematics (inc Computing science) |
Divisions: | Faculties > Sciences > School of Computing > Data Science |
Depositing User: | Frank Wang |
Date Deposited: | 18 Dec 2017 07:45 UTC |
Last Modified: | 25 Sep 2020 14:51 UTC |
Resource URI: | https://kar.kent.ac.uk/id/eprint/65488 (The current URI for this page, for reference purposes) |
Wang, Frank Z.: | ![]() |
- Export to:
- RefWorks
- EPrints3 XML
- BibTeX
- CSV
- Depositors only (login required):