Fractional memristor

Wang, Frank Z. (2017) Fractional memristor. Applied Physics Letters, 111 (24). ISSN 0003-6951. (doi:10.1063/1.5000919)

Abstract

Based on the differential conformal transformation in the fractional order, we defined the fractional memristor in contrast to the traditional (integer-order) memristor. As an example, a typical spintransfer torque (STT) memristor (with the asymmetric resistance hysteresis) was proved to be a 0.8 fractional memristor. In conclusion, many memristors should not be treated as ideal ones due to the fractional interaction between flux and charge. Indeed, unless a non-ideal memristor is properly modelled as a fractional memristor, no deep physical understanding would be possible to develop a reliable commercial product.

Item Type:	Article
DOI/Identification number:	10.1063/1.5000919
Uncontrolled keywords:	memristor, fractional calculus, differential conformal transformation
Subjects:	Q Science > QA Mathematics (inc Computing science)
Divisions:	Faculties > Sciences > School of Computing > Data Science
Depositing User:	Frank Wang
Date Deposited:	18 Dec 2017 07:45 UTC
Last Modified:	09 Jul 2019 09:12 UTC
Resource URI:	https://kar.kent.ac.uk/id/eprint/65488 (The current URI for this page, for reference purposes)
Wang, Frank Z.:	https://orcid.org/0000-0003-4378-2172