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High efficiency broadband GaN HEMT power amplifier based on three-frequency point matching method

Cheng, Zhiqun, Zhao, Ziming, Ke, Huajie, Liu, Guohua, Dong, Zhihua, Gao, Steven (2017) High efficiency broadband GaN HEMT power amplifier based on three-frequency point matching method. Microwave and Optical Technology Letters, 59 (8). pp. 1850-1855. ISSN 0895-2477. (doi:10.1002/mop.30634) (The full text of this publication is not currently available from this repository. You may be able to access a copy if URLs are provided)

The full text of this publication is not currently available from this repository. You may be able to access a copy if URLs are provided. (Contact us about this Publication)
Official URL
https://doi.org/10.1002/mop.30634

Abstract

To cover the working frequency bands of the three mobile carriers of China Mobile, China Telecom, and China Unicom, power amplifiers (PAs) are required to own broadband. A PA with bandwidth 1.3–2.7 GHz is designed (fully covers the operating bands of the three mobile carriers). Measured results show that greater than 68% efficiency is attained over a 75% bandwidth from 1.3 to 2.7 GHz. The output power is larger than 40.2 dBm with gain varying from 10 to 13 dB across the band. In this article, three-frequency point matching method is applied in order for broadband matching. High-efficiency is achieved by a specially designed impedance matching topology which realizes short-circuits of the second harmonics and open-circuits of the third harmonics at different frequencies. The designed broadband high-efficiency GaN PA provides a new approach and method for the development of PAs in 4G base stations.

Item Type: Article
DOI/Identification number: 10.1002/mop.30634
Divisions: Faculties > Sciences > School of Engineering and Digital Arts
Depositing User: Steven Gao
Date Deposited: 19 Jun 2017 15:35 UTC
Last Modified: 05 Sep 2019 10:19 UTC
Resource URI: https://kar.kent.ac.uk/id/eprint/62107 (The current URI for this page, for reference purposes)
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