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Design and fabrication of ultra-wideband power amplifier based on GaN HEMT

Cheng, Zhiqun, Zhu, Dandan, Yan, Guoguo, Chen, Shuai, Wang, Kai, Fan, Kaikai, Liu, Guohua, Wang, Hui, Gao, Steven (2015) Design and fabrication of ultra-wideband power amplifier based on GaN HEMT. IEICE Electronics Express, 12 (20). p. 20150703. ISSN 1349-2543. E-ISSN 1349-2543. (doi:10.1587/elex.12.20150703) (The full text of this publication is not currently available from this repository. You may be able to access a copy if URLs are provided)

The full text of this publication is not currently available from this repository. You may be able to access a copy if URLs are provided. (Contact us about this Publication)
Official URL
http://doi.org/10.1587/elex.12.20150703

Abstract

The research of an ultra-broadband power amplifier based on TGF2023-2-02 GaN HEMT which operates in the frequency ranging from 3 GHz to 8 GHz, is presented in this paper. The transistor of GaN HEMT is modeled and a frequency compensation and multi-side impedance matching approach are adopted for broadband impedance matching of amplifier. And a fan shaped micro strip line is implemented in the input matching network to achieve the wideband higher gain features. The measured results show that the amplifier module provided more than 37 dBm output power with minimum small signal gain of 9.8 dB over 3–8 GHz. The saturated output power is 38.3 dBm under DC bias of Vds = 28 V, Vgs = ?2.75 V at the frequency of 5 GHz.

Item Type: Article
DOI/Identification number: 10.1587/elex.12.20150703
Uncontrolled keywords: GaN HEMT, ultra broadband, power amplifier, output power
Subjects: T Technology
Divisions: Faculties > Sciences > School of Engineering and Digital Arts > Broadband & Wireless Communications
Depositing User: Tina Thompson
Date Deposited: 03 Mar 2016 14:32 UTC
Last Modified: 29 May 2019 17:04 UTC
Resource URI: https://kar.kent.ac.uk/id/eprint/54430 (The current URI for this page, for reference purposes)
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