Engineering the magnetic properties of Ge1-x Mnx nanowires

Kazakova, O. and Kulkarni, J.S. and Arnold, Donna C. and Holmes, J.D. (2007) Engineering the magnetic properties of Ge1-x Mnx nanowires. Journal of Applied Physics, 101 (9). ISSN 0021-8979. (doi:https://doi.org/10.1063/1.2694052) (The full text of this publication is not currently available from this repository. You may be able to access a copy if URLs are provided)

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http://dx.doi.org/10.1063/1.2694052

Abstract

Possible origins of room-temperature ferromagnetism in GeMn nanowires (NWs) are investigated. Arrays of Ge1-x Mnx NWs and Ge Ge1-x Mnx nanocables (NCs) (x=1%-5%) have been synthesized within the pores of anodized alumina oxide (AAO) membranes. The influence of annealing on the magnetic properties of Ge1-x Mnx NWs is studied. The room-temperature ferromagnetism is preserved after the postfabrication annealing in inert atmosphere (Tann =750 °C) demonstrating overall compatibility of Ge1-x Mnx NWs with conventional complementary metal-oxide semiconductor technology. The role of oxygen in high- TC ferromagnetic ordering is investigated in double-phased NCs with a Ge sheath. Despite a barrier to oxygen migration from the AAO membrane, samples still display room-temperature ferromagnetism, hence, ruling out any significant role of oxygen in the explanation of the high TC in the system. The magnetic properties of the one-dimensional Ge1-x Mnx nanostructures can be understood by considering interface related phenomena.

Item Type: Article
Additional information: Unmapped bibliographic data: C7 - 09H108 [EPrints field already has value set] LA - English [Field not mapped to EPrints] J2 - J Appl Phys [Field not mapped to EPrints] AD - NPL, Hampton Road, Teddington, Middlesex TW11 OLW, United Kingdom [Field not mapped to EPrints] AD - Department of Chemistry, UCC, Cork, Ireland [Field not mapped to EPrints] DB - Scopus [Field not mapped to EPrints]
Uncontrolled keywords: Annealing, CMOS integrated circuits, Energy barriers, Ferromagnetism, Germanium compounds, Anodized alumina oxide (AAO), Inert atmosphere, Oxygen migration, Nanowires
Subjects: Q Science > QC Physics > QC176.8.N35 Nanoscience, nanotechnology
Divisions: Faculties > Sciences > School of Physical Sciences
Faculties > Sciences > School of Physical Sciences > Functional Materials Group
Depositing User: Giles Tarver
Date Deposited: 07 Jul 2015 10:40 UTC
Last Modified: 14 Feb 2019 16:04 UTC
Resource URI: https://kar.kent.ac.uk/id/eprint/49068 (The current URI for this page, for reference purposes)
Arnold, Donna C.: https://orcid.org/0000-0003-0239-5790
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