Planarized and nanopatterned mesoporous silica thin films by chemical-mechanical polishing of gap-filled topographically patterned substrates

Arnold, Donna C. and Blake, A. and Quinn, A. and Iacopino, D. and Tobin, J.M. and Omahony, C. and Holmes, J.D. and Morris, M.A. (2011) Planarized and nanopatterned mesoporous silica thin films by chemical-mechanical polishing of gap-filled topographically patterned substrates. IEEE Transactions on Nanotechnology, 10 (3). pp. 451-461. ISSN 1536-125X. (doi:https://doi.org/10.1109/TNANO.2010.2046909) (The full text of this publication is not currently available from this repository. You may be able to access a copy if URLs are provided)

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Official URL
http://dx.doi.org/10.1109/TNANO.2010.2046909

Abstract

Nanopatterning of mesoporous silica thin films is achieved by a simple chemical-mechanical polishing (CMP) process. Mesoporous silica thin films are deposited onto topographically patterned (rectangular cross-section channels) silicon substrates so that good gap fill is achieved within the topography. The straight-etched channels promote the ordering of the mesopores along the length of the channel. CMP can then be used to successfully remove excess film above the channels from the mesas, to leave only the material within the channels, without disrupting pore order. These results indicate the robustness of these mesoporous materials to damage during the CMP process making the prospect of integrating these materials into advanced circuitry a possibility.

Item Type: Article
Additional information: Unmapped bibliographic data: C7 - 5439865 [EPrints field already has value set] LA - English [Field not mapped to EPrints] J2 - IEEE Trans. Nanotechnol. [Field not mapped to EPrints] AD - Department of Chemistry, Tyndall National Institute, University College Cork, Cork, Ireland [Field not mapped to EPrints] AD - Tyndall National Institute, Cork, Ireland [Field not mapped to EPrints] AD - Centre for Research on Adaptive Nanostructures and Nanodevices, Trinity College Dublin, Dublin 2, Ireland [Field not mapped to EPrints] DB - Scopus [Field not mapped to EPrints]
Uncontrolled keywords: Gap fill, mesoporous, planarization, ultralow-dielectric-constant materials, Chemical-mechanical polishing process, CMP process, Gap fill, Meso-pores, Mesoporous, Mesoporous silica thin films, NanoPatterning, Patterned substrates, Planarization, Rectangular cross-section channels, Silicon substrates, ultralow-dielectric-constant materials, Chemical mechanical polishing, Polishing, Silica, Thin films, Topography, Mesoporous materials
Subjects: Q Science > QC Physics > QC176.8.N35 Nanoscience, nanotechnology
Divisions: Faculties > Sciences > School of Physical Sciences
Faculties > Sciences > School of Physical Sciences > Functional Materials Group
Depositing User: Giles Tarver
Date Deposited: 07 Jul 2015 10:58 UTC
Last Modified: 14 Feb 2019 15:44 UTC
Resource URI: https://kar.kent.ac.uk/id/eprint/49061 (The current URI for this page, for reference purposes)
Arnold, Donna C.: https://orcid.org/0000-0003-0239-5790
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