The composition and structure of InGaAs/InAlAs interfaces at the monatomic scale

Mountjoy, G. and Crozier, P.A. and Fejes, P.L. and Tsui, R.K. and Kramer, G.D. (1997) The composition and structure of InGaAs/InAlAs interfaces at the monatomic scale. Applied Physics Letters, 71 (7). pp. 950-952. ISSN 00036951 (ISSN). (The full text of this publication is not currently available from this repository. You may be able to access a copy if URLs are provided)

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Abstract

We have applied high-resolution chemical imaging in a transmission electron microscope to study compositional variations across an InGaAs/InAlAs double quantum well structure in the (100) orientation. The structures of interest are grown on an InP support and consist of two 40 � layers of InGaAs separated by 20 � of InAlAs. For this (InGa)x(InAl)1-xAs system, we have obtained compositional information with an accuracy of about 20% and a maximum spatial resolution of 1/4 unit cell. The results clearly show compositional irregularities on a monatomic scale. © 1997 American Institute of Physics.

Item Type: Article
Additional information: Unmapped bibliographic data: LA - English [Field not mapped to EPrints] J2 - Appl Phys Lett [Field not mapped to EPrints] AD - Center for Solid State Science, Arizona State University, Tempe, AZ 85287-1704, United States [Field not mapped to EPrints] AD - Motorola, Inc., Mat. Res. and Strategic Technologies, Mesa, AZ 85202, United States [Field not mapped to EPrints] AD - Motorola, Inc., Phoenix Corp. Research Laboratories, Tempe, AZ 85284, United States [Field not mapped to EPrints] DB - Scopus [Field not mapped to EPrints]
Subjects: Q Science > QC Physics > QC176 Solid state physics
Q Science > QC Physics
Divisions: Faculties > Sciences > School of Physical Sciences > Functional Materials Group
Depositing User: Giles Tarver
Date Deposited: 16 Jan 2015 16:09 UTC
Last Modified: 27 Feb 2015 10:23 UTC
Resource URI: https://kar.kent.ac.uk/id/eprint/46735 (The current URI for this page, for reference purposes)
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