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Memristor Content Addressable Memory

Chen, Wanlong, Yang, Xiao, Wang, Frank Z. (2014) Memristor Content Addressable Memory. In: 2014 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), 8-10 July 2014, Paris, France. (Access to this publication is currently restricted. You may be able to access a copy if URLs are provided)

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Abstract

Content addressable memory is a novel storage device that can save data in its cells, which could be read, written and searched on the basis of their contents. This paper presents Memristor content addressable memory (M-CAM) structures that are formed of M-CAM cells, which compare searched data and stored data then give a cell output signal to be kept in its comparator. After the comparison in each cell, reading is enabled at each row of all comparators. The current of each row could be measured, if some comparators are high resistance (0) in a row, the current of that row could be lower than the current from another row where all comparators are low resistance (1), which means the corresponding row is a match. The main emphasis of this paper is to highlight the process of the M-CAM comparison and how to get the match entry. Our experimental results show that M-CAM is able to not only query accurately, but also fuzzy lookup through setting the memristor off-to-on resistance ratio.

Item Type: Conference or workshop item (Paper)
Uncontrolled keywords: Arrays Associative memory Computer aided manufacturing Educational institutions Memristors Resistance
Subjects: Q Science > Q Science (General)
Divisions: Faculties > Sciences > School of Computing > Data Science
Depositing User: W. Chen
Date Deposited: 26 Aug 2014 14:18 UTC
Last Modified: 06 Feb 2020 04:09 UTC
Resource URI: https://kar.kent.ac.uk/id/eprint/42684 (The current URI for this page, for reference purposes)
Wang, Frank Z.: https://orcid.org/0000-0003-4378-2172
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