The electronic conditions in the 5d1 layer-metal LaI2 making comparison with the iso- electronic tantalum dichalcogenides, with the other RE di-iodides, and with the RE monochalcogenides

Burrow, J H and Maule, C H and Strange, Paul and Tothill, J N and Wilson, J A (1987) The electronic conditions in the 5d1 layer-metal LaI2 making comparison with the iso- electronic tantalum dichalcogenides, with the other RE di-iodides, and with the RE monochalcogenides. Journal of Physics C: Solid State Physics, 20 (26). pp. 4115-4133. ISSN 0022-3719. (doi:https://doi.org/10.1088/0022-3719/20/26/014) (Access to this publication is currently restricted. You may be able to access a copy if URLs are provided)

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Abstract

Magnetic and resistivity measurements made here reveal an absence of charge- density wave formation in the d' metallic layer di-iodide La12,despite our band structural work showing the Fermi surface of this material to have strong nesting characteristics. The absence of CDWS in these circumstances casts interesting light on the formation of CDW/PLDS in the analogous layer dichalcogenides 5d' IT- and 2H-TaS2,etc. Comparison is made also with other La'' metallic compounds, like LaS and LaH2. Within the rest of the RE di-iodide family there arise further features of significance concerning spin-density waves, magnetic frustration and interconfiguration fluctuation phenomena.

Item Type: Article
Uncontrolled keywords: Condensed matter: electrical, magnetic and optical Surfaces, interfaces and thin films Condensed matter: structural, mechanical & thermal
Subjects: Q Science > QC Physics
Divisions: Faculties > Sciences > School of Physical Sciences
Faculties > Sciences > School of Physical Sciences > Functional Materials Group
Depositing User: Paul Strange
Date Deposited: 24 Jun 2014 08:54 UTC
Last Modified: 09 Oct 2018 14:10 UTC
Resource URI: https://kar.kent.ac.uk/id/eprint/41511 (The current URI for this page, for reference purposes)
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