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Representation of ion implantation profiles by Pearson frequency distribution curves

Ashworth, D.G., Oven, Robert, Mundin, B (1990) Representation of ion implantation profiles by Pearson frequency distribution curves. Journal of Physics D: Applied Physics, 23 (7). pp. 870-876. ISSN 0022-3727. (doi:10.1088/0022-3727/23/7/018) (The full text of this publication is not currently available from this repository. You may be able to access a copy if URLs are provided) (KAR id:38925)

The full text of this publication is not currently available from this repository. You may be able to access a copy if URLs are provided. (Contact us about this Publication)
Official URL
http://dx.doi.org/10.1088/0022-3727/23/7/018

Abstract

A method is described whereby ion implantation profiles in amorphous materials may be accurately represented by Pearson frequency distribution curves. The type of Pearson distribution to be used depends upon the implantation conditions but it is shown that the three main types, I, IV and VI, together with the transition types II, III, V, VII and the Gaussian are all suitable representations. Previous attempts to fit Pearson curves to implantation profiles have often failed due to semi-infinite moments being used instead of infinite moments. This approximation is only valid when the surface concentration of implanted ions is negligibly small.

Item Type: Article
DOI/Identification number: 10.1088/0022-3727/23/7/018
Subjects: T Technology
Divisions: Faculties > Sciences > School of Engineering and Digital Arts
Faculties > Sciences > School of Engineering and Digital Arts > Broadband & Wireless Communications
Depositing User: Tina Thompson
Date Deposited: 27 Mar 2014 15:14 UTC
Last Modified: 25 Jan 2020 04:05 UTC
Resource URI: https://kar.kent.ac.uk/id/eprint/38925 (The current URI for this page, for reference purposes)
Oven, Robert: https://orcid.org/0000-0002-8517-3634
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