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Delayed Switching Applied to Memristor Content Addressable Memory Cell

Chen, Wanlong and Yang, Xiao and Wang, Frank Z. (2013) Delayed Switching Applied to Memristor Content Addressable Memory Cell. In: Proceedings of the World Congress on Engineering 2013. International Association of Engineers, pp. 354-357. ISBN 978-988-19251-0-7. (Access to this publication is currently restricted. You may be able to access a copy if URLs are provided)

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Abstract

Memristor is short for memory resistor, which provides a functional relation between flux and charge. Professor Leon Chua named and formulated it in his paper

"Memristor—The Missing Circuit Element" in 1971. The memristor has a special effect, ‘the delayed switching effect’, which is the memristor switching takes place with a time delay. Content addressable memory (CAM) is a type of associative memories that is adopted in high speed searching applications. The new Memristor-CAM cell has been proposed, which included two memristors; one is used as an important part of the comparator that is instead of the traditional logic gate; and another one is for storing the data as a storage element. In this paper, we report that applying the memristor delayed switching effect to the novel design of the Memristor Content Addressable Memory (M-CAM) cell. The delayed switching effect is used to control the changing time of the memristor’s state, which can enhance the performance, decrease the searching time and save energy.

Item Type: Book section
Uncontrolled keywords: Memristor, memory, CAM, content addressable memory, delayed switching
Subjects: Q Science > QA Mathematics (inc Computing science) > QA 75 Electronic computers. Computer science
Divisions: Faculties > Sciences > School of Computing > Data Science
Depositing User: W. Chen
Date Deposited: 29 Aug 2013 14:38 UTC
Last Modified: 26 Jul 2019 15:03 UTC
Resource URI: https://kar.kent.ac.uk/id/eprint/35043 (The current URI for this page, for reference purposes)
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