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Noise performance of a GaAs MESFET as an optical detector and as an optoelectronic mixer in analogue optical links

Urey, Z., Wu, D., Gomes, Nathan J., Davies, Phil A. (1993) Noise performance of a GaAs MESFET as an optical detector and as an optoelectronic mixer in analogue optical links. Electronics Letters, 29 (2). pp. 147-149. ISSN 0013-5194. (doi:10.1049/el:19930099) (The full text of this publication is not currently available from this repository. You may be able to access a copy if URLs are provided)

The full text of this publication is not currently available from this repository. You may be able to access a copy if URLs are provided. (Contact us about this Publication)
Official URL
http://dx.doi.org/10.1049/el:19930099

Abstract

Noise measurements with a GaAs MESFET employed as a photodetector or as an optoelectronic mixer are reported. Despite its higher noise it is shown that with proper biasing the GaAs MESFET provided a higher carrier-to-noise ratio than a pin photodiode, and as an optoelectronic mixer provided a comparable signal-to-noise ratio to that of a conventional pin and microwave mixer combination. The implications of using GaAs MESFETs in these configurations are discussed.

Item Type: Article
DOI/Identification number: 10.1049/el:19930099
Uncontrolled keywords: optical detector; optoelectronic mixer; analogue optical links; GaAs MESFET; photodetector; noise; carrier-to-noise ratio; signal-to-noise ratio; GaAs
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800 Electronics (see also: telecommunications)
Divisions: Faculties > Sciences > School of Engineering and Digital Arts
Depositing User: O.O. Odanye
Date Deposited: 14 Jul 2009 15:52 UTC
Last Modified: 28 May 2019 13:59 UTC
Resource URI: https://kar.kent.ac.uk/id/eprint/20723 (The current URI for this page, for reference purposes)
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