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Effects of extra low-frequency noise injection on microwave signals generated by a gain-switched semiconductor laser

Lima, Claudio R., Davies, Phil A. (1994) Effects of extra low-frequency noise injection on microwave signals generated by a gain-switched semiconductor laser. Applied Physics Letters, 65 (8). pp. 950-952. ISSN 0003-6951. (doi:10.1063/1.112158) (The full text of this publication is not currently available from this repository. You may be able to access a copy if URLs are provided) (KAR id:19857)

The full text of this publication is not currently available from this repository. You may be able to access a copy if URLs are provided. (Contact us about this Publication)
Official URL
http://dx.doi.org/10.1063/1.112158

Abstract

Low-frequency upconverted noise (1/f laser intensity noise and the low-frequency noise of the driver source) has been identified as the dominant noise generation mechanism in microwave signals generated by a Fabry-Perot gain-switched semiconductor laser. An experimental investigation is carried out using extra low-frequency noise injection added to the drive signal. Results show the dependence of the broadband intensity noise level, formed by the overlapping of the upconverted noise sidebands present at each harmonic, on gain-switching input parameters.

Item Type: Article
DOI/Identification number: 10.1063/1.112158
Subjects: Q Science > QC Physics
Divisions: Faculties > Sciences > School of Physical Sciences
Depositing User: O.O. Odanye
Date Deposited: 08 Jul 2009 13:02 UTC
Last Modified: 28 May 2019 13:58 UTC
Resource URI: https://kar.kent.ac.uk/id/eprint/19857 (The current URI for this page, for reference purposes)
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