Edwards, Ann M. and Fairbanks, Mary C. and Newport, Robert J. and Gurman, Stephen J. and Davis, E.A. (1989) Structural Studies Of Amorphous Si-Ni-H. Journal of Non-Crystalline Solids, 113 (1). pp. 41-50. ISSN 0022-3093. (doi:10.1016/0022-3093(89)90316-5 ) (Full text available)
It is well know that the transition from an insulator to a metallic conductor may be induced in amorphous semiconductor : metal alloys by increasing the metal concentration above a certain critical limit. However, without a detailed understanding of the changes taking place in the atomic scale structure, it is difficult to ascribe a mechanism to the process. We have investigated the microstructure of one such alloy system, a-Si1-yNiyH, using EXAFS as the principal technique. Thin film samples, prepared by rf co-sputtering, were studied over the composition range 0<y<0.3. Both silicon and nickel K-edge EXAFS results are presented, together with complimentary data from Raman scattering, neutron diffraction and scanning calorimetry experiments. The results indicate that the samples contain two separate amorphous phases: a Ni:Si alloy which is embedded in the surviving, modified a-Si host network. The measured electrical conductivity is discussed in the light of this structural model.
|Divisions:||Faculties > Sciences > School of Physical Sciences > Functional Materials Group|
|Depositing User:||J.M. Smith|
|Date Deposited:||09 Apr 1914 15:01 UTC|
|Last Modified:||08 Jul 2014 08:27 UTC|
|Resource URI:||https://kar.kent.ac.uk/id/eprint/15895 (The current URI for this page, for reference purposes)|
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