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Structural Studies Of Amorphous Si-Ni-H

Edwards, Ann M., Fairbanks, Mary C., Newport, Robert J., Gurman, Stephen J., Davis, E.A. (1989) Structural Studies Of Amorphous Si-Ni-H. Journal of Non-Crystalline Solids, 113 (1). pp. 41-50. ISSN 0022-3093. (doi:10.1016/0022-3093(89)90316-5) (KAR id:15895)


It is well know that the transition from an insulator to a metallic conductor may be induced in amorphous semiconductor : metal alloys by increasing the metal concentration above a certain critical limit. However, without a detailed understanding of the changes taking place in the atomic scale structure, it is difficult to ascribe a mechanism to the process. We have investigated the microstructure of one such alloy system, a-Si1-yNiyH, using EXAFS as the principal technique. Thin film samples, prepared by rf co-sputtering, were studied over the composition range 0<y<0.3. Both silicon and nickel K-edge EXAFS results are presented, together with complimentary data from Raman scattering, neutron diffraction and scanning calorimetry experiments. The results indicate that the samples contain two separate amorphous phases: a Ni:Si alloy which is embedded in the surviving, modified a-Si host network. The measured electrical conductivity is discussed in the light of this structural model.

Item Type: Article
DOI/Identification number: 10.1016/0022-3093(89)90316-5
Subjects: Q Science
Divisions: Divisions > Division of Natural Sciences > Physics and Astronomy
Depositing User: J.M. Smith
Date Deposited: 09 Apr 1914 15:01 UTC
Last Modified: 16 Nov 2021 09:53 UTC
Resource URI: (The current URI for this page, for reference purposes)

University of Kent Author Information

Newport, Robert J..

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