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Structural Studies Of Amorphous Semiconductor-Metal Alloys

Edwards, Ann M., Fairbanks, Mary C., Newport, Robert J., Gurman, Stephen J. (1990) Structural Studies Of Amorphous Semiconductor-Metal Alloys. Vacuum, 41 . pp. 1335-1338. ISSN 0042-207X. (doi:10.1016/0042-207X(90)93950-N)

Abstract

It is well known that a semiconductor to metal transition may be induced in amorphous semiconductor-metal alloys by increasing the metal concentration above a critical limit. However, without a knowledge of the atomic scale structure of the alloy it is difficult to ascribe a mechanism to this process. Three alloy systems (a-Si1?xNix---H, a-Ge1?xAux and a-Si1?xSnx---H) have been prepared as thin films by rf reactive co-sputtering over pertinent composition ranges. The micro-structure of these alloys has been investigated using EXAFS. Both a-Si1?xNix---H and a-Ge1?xAux appear to consist of two separate phases, regions of an amorphous Ni---Si alloy and a crystalline Ge---Au alloy being embedded in an amorphous matrix provided by a-Si and a-Ge, respectively. In contrast, however, Sn atoms are substituted randomly into the a-Si tetrahedral random network.

Item Type: Article
DOI/Identification number: 10.1016/0042-207X(90)93950-N
Subjects: Q Science
Divisions: Faculties > Sciences > School of Physical Sciences > Functional Materials Group
Depositing User: J.M. Smith
Date Deposited: 09 Apr 1914 14:23 UTC
Last Modified: 28 May 2019 13:53 UTC
Resource URI: https://kar.kent.ac.uk/id/eprint/15894 (The current URI for this page, for reference purposes)
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