Edwards, Ann M. and Fairbanks, Mary C. and Newport, Robert J. and Gurman, Stephen J. (1990) Structural Studies Of Amorphous Semiconductor-Metal Alloys. Vacuum, 41 . pp. 1335-1338. ISSN 0042-207X. (doi:https://doi.org/10.1016/0042-207X(90)93950-N ) (Full text available)
It is well known that a semiconductor to metal transition may be induced in amorphous semiconductor-metal alloys by increasing the metal concentration above a critical limit. However, without a knowledge of the atomic scale structure of the alloy it is difficult to ascribe a mechanism to this process. Three alloy systems (a-Si1−xNix---H, a-Ge1−xAux and a-Si1−xSnx---H) have been prepared as thin films by rf reactive co-sputtering over pertinent composition ranges. The micro-structure of these alloys has been investigated using EXAFS. Both a-Si1−xNix---H and a-Ge1−xAux appear to consist of two separate phases, regions of an amorphous Ni---Si alloy and a crystalline Ge---Au alloy being embedded in an amorphous matrix provided by a-Si and a-Ge, respectively. In contrast, however, Sn atoms are substituted randomly into the a-Si tetrahedral random network.
|Divisions:||Faculties > Sciences > School of Physical Sciences > Functional Materials Group|
|Depositing User:||J.M. Smith|
|Date Deposited:||09 Apr 1914 14:23 UTC|
|Last Modified:||13 Jan 2017 23:25 UTC|
|Resource URI:||https://kar.kent.ac.uk/id/eprint/15894 (The current URI for this page, for reference purposes)|