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The Structure Of a-Si(1-X)Sn(X)H Thin Films

Edwards, Ann M., Fairbanks, Mary C., Newport, Robert J. (1990) The Structure Of a-Si(1-X)Sn(X)H Thin Films. Physica B: Condensed Matter, 167 (3). pp. 247-256. ISSN 0921-4526. (doi:10.1016/0921-4526(90)90356-Y) (KAR id:15892)


The doping of a-Si:H with Sn is known to modify the electrical and optical properties of the material. The optical band gap decreases as the doping level is increased, however, there is no insulator-metal transition of the type observed, for example, when transition metals are used as dopants. In order to increase the understanding of the conductivity processes that occur in a-Si:metal:H alloys we have measured the atomic scale structure of a series of a-Si(1-x)Sn(x):H thin-films using EXAFS. Samples were prepared by RF reactive co-sputtering and both Si and Sn K-edge EXAFS examined. The results indicate that the Sn atoms are substituted randomly into the a-Si tetrahedral random network. Both Si and Sn atoms retain fourfold co-ordination over the composition range studied (0-less-than-or-equal-to-x-less-than-or-equal-to-0.18). In contrast to results obtained using transition metal dopants there is no local modification of the tetrahedral random network.

Item Type: Article
DOI/Identification number: 10.1016/0921-4526(90)90356-Y
Subjects: Q Science
Divisions: Divisions > Division of Natural Sciences > Physics and Astronomy
Depositing User: J.M. Smith
Date Deposited: 09 Apr 1914 14:53 UTC
Last Modified: 16 Nov 2021 09:53 UTC
Resource URI: (The current URI for this page, for reference purposes)

University of Kent Author Information

Newport, Robert J..

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