Light Confinement in 3D Silicon Doped with Germanium (n-SixGe1-x) and Silicon-On-Insulator (SOI) Photonic Crystal Structures

Ouerghi, F. and AbdelMalek, Fathi and Haxha, Shyqyri and Mejatty, M. and Bouchriha, Habib and Haxha, Vesel (2006) Light Confinement in 3D Silicon Doped with Germanium (n-SixGe1-x) and Silicon-On-Insulator (SOI) Photonic Crystal Structures. Optics Communications, 265 (2). pp. 683-691. ISSN 0030-4018. (The full text of this publication is not available from this repository)

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Official URL
http://dx.doi.org/10.1016/j.optcom.2006.04.010
Item Type: Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK5101 Telecommunications
Divisions: Faculties > Science Technology and Medical Studies > School of Engineering and Digital Arts > Broadband & Wireless Communications
Depositing User: Yiqing Liang
Date Deposited: 08 Sep 2008 21:03
Last Modified: 09 Jul 2014 09:18
Resource URI: http://kar.kent.ac.uk/id/eprint/9773 (The current URI for this page, for reference purposes)
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