Blacklocks, AN and Savin, SLP and Chadwick, A.V. and Atkinson, A. (2006) An XAS study of the defect structure of Ti-doped alpha-Cr2O3. Solid State Ionics, 177 (33-34). pp. 2939-2944. ISSN 0167-2738.
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| Official URL http://dx.doi.org/10.1016/j.ssi.2006.08.028 |
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Abstract
The bulk defect structure in Cr2-xTixO3 (x = 0.05, 0.20 and 0.30) has been studied by X-ray absorption spectroscopy measurements at the Cr and Ti K-edges. The results show that the Ti is predominantly present in the IV oxidation state and resides on the normal Cr host lattice site. The dopant is charge compensated by Cr3+ vacancies and there is evidence for the formation of defect clusters; however, the detailed structure of these clusters could not be deduced.
| Item Type: | Article |
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| Subjects: | Q Science |
| Divisions: | Faculties > Science Technology and Medical Studies > School of Physical Sciences |
| Depositing User: | Alan Chadwick |
| Date Deposited: | 23 Sep 2008 14:49 |
| Last Modified: | 06 Sep 2011 00:09 |
| Resource URI: | http://kar.kent.ac.uk/id/eprint/8429 (The current URI for this page, for reference purposes) |
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