Noise performance of a GaAs MESFET as an optical detector and as an optoelectronic mixer in analogue optical links

Urey, Z. and Wu, D. and Gomes, Nathan J. and Davies, Phil A. (1993) Noise performance of a GaAs MESFET as an optical detector and as an optoelectronic mixer in analogue optical links. Electronics Letters, 29 (2). pp. 147-149. ISSN 0013-5194. (The full text of this publication is not available from this repository)

The full text of this publication is not available from this repository. (Contact us about this Publication)
Official URL
http://dx.doi.org/10.1049/el:19930099

Abstract

Noise measurements with a GaAs MESFET employed as a photodetector or as an optoelectronic mixer are reported. Despite its higher noise it is shown that with proper biasing the GaAs MESFET provided a higher carrier-to-noise ratio than a pin photodiode, and as an optoelectronic mixer provided a comparable signal-to-noise ratio to that of a conventional pin and microwave mixer combination. The implications of using GaAs MESFETs in these configurations are discussed.

Item Type: Article
Uncontrolled keywords: optical detector; optoelectronic mixer; analogue optical links; GaAs MESFET; photodetector; noise; carrier-to-noise ratio; signal-to-noise ratio; GaAs
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800 Electronics (see also: telecommunications)
Divisions: Faculties > Science Technology and Medical Studies > School of Engineering and Digital Arts
Depositing User: O.O. Odanye
Date Deposited: 14 Jul 2009 15:52
Last Modified: 17 Apr 2014 10:25
Resource URI: http://kar.kent.ac.uk/id/eprint/20723 (The current URI for this page, for reference purposes)
  • Depositors only (login required):