Ladbrooke, P.H. and Jastrzebski, A.K. and Donarski, R.J. and Bridge, J.P. and Barnaby, J.E. (1995) Mechanism of drain current droop in GaAs MESFETs. Electronics Letters, 31 (21). pp. 1875-1876. ISSN 0013-5194.
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| Official URL http://dx.doi.org/10.1049/el:19951234 |
Abstract
The mechanisms responsible for the drain current droop in GaAs MESFETs are discussed and their relative contributions evaluated. Contrary to a common belief that the cause is mainly self-heating, it is shown on the example of a power MESFET that deep level effects (surface states and bulk traps) have a higher contribution.
| Item Type: | Article |
|---|---|
| Uncontrolled keywords: | gallium arsenide; mesfets; semiconductor device models |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology > TA Engineering (General). Civil engineering (General) |
| Divisions: | Faculties > Science Technology and Medical Studies > School of Engineering and Digital Arts |
| Depositing User: | O.O. Odanye |
| Date Deposited: | 08 Jun 2009 12:42 |
| Last Modified: | 17 Jul 2012 12:07 |
| Resource URI: | http://kar.kent.ac.uk/id/eprint/19329 (The current URI for this page, for reference purposes) |
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