Mechanism of drain current droop in GaAs MESFETs

Ladbrooke, P.H. and Jastrzebski, Adam K. and Donarski, R.J. and Bridge, J.P. and Barnaby, J.E. (1995) Mechanism of drain current droop in GaAs MESFETs. Electronics Letters, 31 (21). pp. 1875-1876. ISSN 0013-5194. (The full text of this publication is not available from this repository)

The full text of this publication is not available from this repository. (Contact us about this Publication)
Official URL
http://dx.doi.org/10.1049/el:19951234

Abstract

The mechanisms responsible for the drain current droop in GaAs MESFETs are discussed and their relative contributions evaluated. Contrary to a common belief that the cause is mainly self-heating, it is shown on the example of a power MESFET that deep level effects (surface states and bulk traps) have a higher contribution.

Item Type: Article
Uncontrolled keywords: gallium arsenide; mesfets; semiconductor device models
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
T Technology > TA Engineering (General). Civil engineering (General)
Divisions: Faculties > Science Technology and Medical Studies > School of Engineering and Digital Arts
Depositing User: O.O. Odanye
Date Deposited: 08 Jun 2009 12:42
Last Modified: 27 May 2014 07:34
Resource URI: http://kar.kent.ac.uk/id/eprint/19329 (The current URI for this page, for reference purposes)
  • Depositors only (login required):