Ladbrooke, P.H. and Jastrzebski, A.K. and Donarski, R.J. and Bridge, J.P. and Barnaby, J.E. (1995) Mechanism of drain current droop in GaAs MESFETs. Electronics Letters, 31 (21). pp. 1875-1876. ISSN 0013-5194.
|The full text of this publication is not available from this repository. (Contact us about this Publication)|
The mechanisms responsible for the drain current droop in GaAs MESFETs are discussed and their relative contributions evaluated. Contrary to a common belief that the cause is mainly self-heating, it is shown on the example of a power MESFET that deep level effects (surface states and bulk traps) have a higher contribution.
|Uncontrolled keywords:||gallium arsenide; mesfets; semiconductor device models|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering
T Technology > TA Engineering (General). Civil engineering (General)
|Divisions:||Faculties > Science Technology and Medical Studies > School of Engineering and Digital Arts|
|Depositing User:||O.O. Odanye|
|Date Deposited:||08 Jun 2009 12:42|
|Last Modified:||17 Jul 2012 12:07|
|Resource URI:||http://kar.kent.ac.uk/id/eprint/19329 (The current URI for this page, for reference purposes)|
- Depositors only (login required):