Bowyer, M.D.J. and Ashworth, D.G. and Oven, R. (1996) Generating ion implantation profiles in one and two dimensions .2. Depth-dependent moments and line-source responses. Journal of Physics D-Applied Physics, 29 (5). pp. 1286-1299. ISSN 0022-3727.
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| Official URL http://dx.doi.org/10.1088/0022-3727/29/5/023 |
Abstract
In this, the second of two papers, various techniques and models are proposed for the extraction of depth-dependent lateral moments from the depth-independent mixed moments produced by transport equation solvers. These depth-dependent moments are then compared with those obtained directly from Monte Carlo simulations. A set of such comparisons, using consistent input quantities, is performed over a range of ion-target mass ratios and energies. The depth-dependent moments are then combined with Pearson and/or Johnson curves to form two-dimensional ion implantation profiles. Comparisons are made between these line-source responses (LSRs) and LSRs obtained directly from Monte Carlo simulations into a-Si for the various models over a range of energies and ion types. Selection of appropriate models leads to LSRs for the ions B, P and As implanted into a-Si which are in good agreement with Monte Carte simulations over three orders of magnitude of profile concentration. The techniques described will enable two-dimensional profile information to be stored and regenerated, quickly and efficiently, within process simulators so that rapid optimization of processing parameters may be achieved.
| Item Type: | Article |
|---|---|
| Subjects: | Q Science > QC Physics |
| Divisions: | Faculties > Science Technology and Medical Studies > School of Engineering and Digital Arts |
| Depositing User: | M.A. Ziai |
| Date Deposited: | 16 May 2009 05:42 |
| Last Modified: | 16 May 2009 05:42 |
| Resource URI: | http://kar.kent.ac.uk/id/eprint/18839 (The current URI for this page, for reference purposes) |
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