Rush, G.E. and Chadwick, A.V. and Pannell, C.N. and Bilsborrow, R.L. (1999) The location of silver dopants in lead halide single crystals. Radiation Effects and Defects in Solids, 149 (1-4). pp. 315-321. ISSN 1042-0150.
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Abstract
Lead(II) bromide and chloride have been purified by zone refinement and these purified products are grown into large device quality single crystals by the Bridgman-Stockbarger technique. Cracking on cooling is observed especially in the case of lead bromide. To alleviate this problem, doping with silver bromide at the level of 0.05-0.5 mol% is shown to eliminate cracking. The role of the dopant is unclear, but is presumably associated with the location of the ion within the host lattice. Extended X-ray Absorption Fine Structure (EXAFS) analysis was performed at Daresbury Laboratories to determine this role and it was found to be a simple substitution into the crystal lattice.
| Item Type: | Article |
|---|---|
| Additional information: | Proceedings Paper; Event date: Jul 06-11, 1998 |
| Uncontrolled keywords: | lead(II) halides; EXAFS; acousto-optic materials |
| Subjects: | Q Science T Technology T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
| Divisions: | Faculties > Science Technology and Medical Studies > School of Physical Sciences |
| Depositing User: | F.D. Zabet |
| Date Deposited: | 28 Mar 2009 22:18 |
| Last Modified: | 28 Mar 2009 22:18 |
| Resource URI: | http://kar.kent.ac.uk/id/eprint/16574 (The current URI for this page, for reference purposes) |
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