Nanoscale heterogeneities in amorphous semiconductor(x)metal(1-x) alloys: A small-angle x-ray scattering study

Rigden, Jane S. and Newport, Robert J. (1999) Nanoscale heterogeneities in amorphous semiconductor(x)metal(1-x) alloys: A small-angle x-ray scattering study. Journal of Materials Research, 14 (4). pp. 1272-1278. ISSN 0884-2914. (Full text available)

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http://dx.doi.org/10.1557/JMR.1999.0173

Abstract

A series of small-angle x-ray scattering (SAXS) experiments has been conducted in order to probe further the X-ray absorption fine structure (EXAFS)-derived nanoscale structure of amorphous hydrogenated silicon(x)tin(1-x), hydrogenated silicon(x)nickell(1-x), and germanium,gold(1-x), materials as a function of metal content. The SAXS results reveal information on cluster formation within these reactively radio-frequency-sputtered amorphous thin films. The data are considered within the context of EXAFS data and lend support to a model in which the degree and nature of the heterogeneities depend primarily on the metal species, with the level of metal content inducing additional effects. In particular, the results support a percolation model for the metal:nonmetal transition in amorphous semiconductor,transition metal(1-x), alloys, the conducting volume elements comprising metal or metal compound-rich regions within the amorphous tetrahedral host network.

Item Type: Article
Subjects: Q Science
Divisions: Faculties > Science Technology and Medical Studies > School of Physical Sciences > Functional Materials Group
Depositing User: F.D. Zabet
Date Deposited: 15 Apr 2009 16:42
Last Modified: 03 Jun 2014 08:04
Resource URI: http://kar.kent.ac.uk/id/eprint/16550 (The current URI for this page, for reference purposes)
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