Edwards, A.M. and Fairbanks, M.C. and Newport, R.J. (1990) The Structure Of a-Si(1-X)Sn(X)H Thin Films. Physica B, 167 (3). pp. 247-256. ISSN 0921-4526.
|
Download (13Mb)
|
![[img]](http://kar.kent.ac.uk/style/images/fileicons/application_pdf.png)
|
|
| Official URL http://dx.doi.org/10.1016/0921-4526(90)90356-Y |
||
Abstract
The doping of a-Si:H with Sn is known to modify the electrical and optical properties of the material. The optical band gap decreases as the doping level is increased, however, there is no insulator-metal transition of the type observed, for example, when transition metals are used as dopants. In order to increase the understanding of the conductivity processes that occur in a-Si:metal:H alloys we have measured the atomic scale structure of a series of a-Si(1-x)Sn(x):H thin-films using EXAFS. Samples were prepared by RF reactive co-sputtering and both Si and Sn K-edge EXAFS examined. The results indicate that the Sn atoms are substituted randomly into the a-Si tetrahedral random network. Both Si and Sn atoms retain fourfold co-ordination over the composition range studied (0-less-than-or-equal-to-x-less-than-or-equal-to-0.18). In contrast to results obtained using transition metal dopants there is no local modification of the tetrahedral random network.
| Item Type: | Article |
|---|---|
| Subjects: | Q Science |
| Divisions: | Faculties > Science Technology and Medical Studies > School of Physical Sciences > Functional Materials Group |
| Depositing User: | J.M. Smith |
| Date Deposited: | 09 Apr 1914 14:53 |
| Last Modified: | 02 Dec 2011 11:31 |
| Resource URI: | http://kar.kent.ac.uk/id/eprint/15892 (The current URI for this page, for reference purposes) |
- Depositors only (login required):
